RT Journal Article ID 027e65897f57a3c7 A1 Andreev, Dmitrii V. A1 Bondarenko, Gennady G. A1 Andreev, Vladimir V. A1 Maslowsky, Vladimir M. A1 Stolyarov, Alexander A. T1 MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO2 FILMS BY PHOSPHORUS DIFFUSION JF High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes JO HTM YR 2017 FD 2018-03-13 VO 21 IS 4 SP 299 OP 307 K1 MIS structure K1 thin dielectric film K1 modification K1 high-field injection K1 electron traps AB We investigate the diffusion of phosphorus in thermal SiO2 films of MIS structure and influence of the process on charge effects in gate dielectric and at interfaces in Fowler–Nordheim high-field tunnel injection of electrons. One rates the cross sections of electron traps in a phosphosilicate glass (PSG) film. We show that the density of electron traps increases with increasing the PSG film thickness. The ability of using a negative charge has been established. It is accumulated in the PSG film of MIS structures with double-layer SiO2–PSG gate dielectric during high-field tunnel injection of electrons, to modify MIS devices. It is shown that the use of a double-layer SiO2–PSG gate dielectric with concentration of phosphorus in PSG film of 0.4–0.9% allows one to increase the average amount of charge injected into a dielectric until breakdown and decrease the amount of defective structures with a low amount of charge injected into the dielectric before breakdown. PB Begell House LK https://www.dl.begellhouse.com/journals/57d172397126f956,22c92db4219c9581,027e65897f57a3c7.html