RT Journal Article
ID 027e65897f57a3c7
A1 Andreev, Dmitrii V.
A1 Bondarenko, Gennady G.
A1 Andreev, Vladimir V.
A1 Maslowsky, Vladimir M.
A1 Stolyarov, Alexander A.
T1 MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO2 FILMS BY PHOSPHORUS DIFFUSION
JF High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
JO HTM
YR 2017
FD 2018-03-13
VO 21
IS 4
SP 299
OP 307
K1 MIS structure
K1 thin dielectric film
K1 modification
K1 high-field injection
K1 electron traps
AB We investigate the diffusion of phosphorus in thermal SiO2 films of MIS structure and influence of the process on charge effects in gate dielectric and at interfaces in Fowler–Nordheim high-field tunnel injection of electrons. One rates the cross sections of electron traps in a phosphosilicate glass (PSG) film. We show that the density of electron traps increases with increasing the PSG
film thickness. The ability of using a negative charge has been established. It is accumulated in the PSG film of MIS structures with double-layer SiO2–PSG gate dielectric during high-field tunnel injection of electrons, to modify MIS devices. It is shown that the use of a double-layer SiO2–PSG gate dielectric with concentration of phosphorus in PSG film of 0.4–0.9% allows one to increase the average amount of charge injected into a dielectric until breakdown and decrease the amount of defective structures with a low amount of charge injected into the dielectric before breakdown.
PB Begell House
LK https://www.dl.begellhouse.com/journals/57d172397126f956,22c92db4219c9581,027e65897f57a3c7.html