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Портал Begell Электронная Бибилиотека e-Книги Журналы Справочники и Сборники статей Коллекции
International Journal for Multiscale Computational Engineering
Импакт фактор: 1.016 5-летний Импакт фактор: 1.194 SJR: 0.554 SNIP: 0.82 CiteScore™: 2

ISSN Печать: 1543-1649
ISSN Онлайн: 1940-4352

Выпуски:
Том 18, 2020 Том 17, 2019 Том 16, 2018 Том 15, 2017 Том 14, 2016 Том 13, 2015 Том 12, 2014 Том 11, 2013 Том 10, 2012 Том 9, 2011 Том 8, 2010 Том 7, 2009 Том 6, 2008 Том 5, 2007 Том 4, 2006 Том 3, 2005 Том 2, 2004 Том 1, 2003

International Journal for Multiscale Computational Engineering

DOI: 10.1615/IntJMultCompEng.v3.i1.80
pages 107-133

Review: Multiscale Thermal Modeling in Nanoelectronics

Sanjiv Sinha
Thermosciences Division, Department of Mechanical Engineering, Stanford University, Stanford, CA 94305-3030, USA
Kenneth E. Goodson
Thermosciences Division, Mechanical Engineering Department, Stanford University Bldg. 530, 440 Escondido Mall, Stanford, CA 94305-3030, USA

Краткое описание

Subcontinuum phonon conduction phenomena impede the cooling of field-effect transistors with gate lengths less than 100 nm, which degrades their performance and reliability. Thermal modeling of these nanodevices requires attention to a broad range of length scales and physical phenomena, ranging from continuum heat diffusion to atomic-scale interactions and phonon confinement. This review describes the state of the art in subcontinuum thermal modeling. Although the focus is on the silicon field-effect transistor, the models are general enough to apply to other semiconductor devices as well. Special attention is given to the recent advances in applying statistical and atomistic simulation methods to thermal transport.


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