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Портал Begell Электронная Бибилиотека e-Книги Журналы Справочники и Сборники статей Коллекции
International Journal for Multiscale Computational Engineering
Импакт фактор: 1.016 5-летний Импакт фактор: 1.194 SJR: 0.554 SNIP: 0.68 CiteScore™: 1.18

ISSN Печать: 1543-1649
ISSN Онлайн: 1940-4352

Выпуски:
Том 17, 2019 Том 16, 2018 Том 15, 2017 Том 14, 2016 Том 13, 2015 Том 12, 2014 Том 11, 2013 Том 10, 2012 Том 9, 2011 Том 8, 2010 Том 7, 2009 Том 6, 2008 Том 5, 2007 Том 4, 2006 Том 3, 2005 Том 2, 2004 Том 1, 2003

International Journal for Multiscale Computational Engineering

DOI: 10.1615/IntJMultCompEng.v9.i3.50
pages 327-346

OVERALL ELASTIC PROPERTIES OF POLYSILICON FILMS: A STATISTICAL INVESTIGATION OF THE EFFECTS OF POLYCRYSTAL MORPHOLOGY

Stefano Mariani
Politecnico di Milano, Dipartimento di Ingegneria Strutturale, Italy
Roberto Martini
Politecnico di Milano, Dipartimento di Ingegneria Strutturale, Italy
Aldo Ghisi
Politecnico di Milano, Dipartimento di Ingegneria Strutturale, Italy
Alberto Corigliano
Politecnico di Milano, Dipartimento di Ingegneria Strutturale, Italy
Marco Beghi
Politecnico di Milano, Dipartimento di Energia, NEMAS-Center for NanoEngineered Materials and Surfaces, Italy

Краткое описание

In this paper we investigate the effects of polycrystal morphology on the overall properties of polysilicon. Focusing on two-dimensional representative volume elements (RVEs) of textured films, we numerically generate digital polycrystal morphologies through Voronoi tessellations and assume the in-plane orientation of the crystal lattice of silicon grains to be randomly distributed. First, we show how a regularization provision for the Voronoi tessellations, adopted in order to better match the grain boundary (GB) geometry featured by actual polysilicon films, affects the statistics of an internal length-scale which naturally emerges because of the presence of GBs. Second, we provide a numerical homogenization technique to estimate the overall in-plane elastic moduli of the polysilicon film and compare the outcomes with standard Voigt and Reuss bounds. Through this comparison, we furnish a way to also estimate the size of the RVE to get effective results. Third, through Monte Carlo simulations we investigate the effect of microstructural fluctuations on the scattering of the overall elastic moduli of polysilicon. We show that even when the RVE appears to be representative for a single polycrystal realization, the RVE might not be representative if one looks at the extreme values of the aforementioned scattered elastic moduli.