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International Journal for Multiscale Computational Engineering
Импакт фактор: 1.016 5-летний Импакт фактор: 1.194 SJR: 0.452 SNIP: 0.68 CiteScore™: 1.18

ISSN Печать: 1543-1649
ISSN Онлайн: 1940-4352

Выпуски:
Том 17, 2019 Том 16, 2018 Том 15, 2017 Том 14, 2016 Том 13, 2015 Том 12, 2014 Том 11, 2013 Том 10, 2012 Том 9, 2011 Том 8, 2010 Том 7, 2009 Том 6, 2008 Том 5, 2007 Том 4, 2006 Том 3, 2005 Том 2, 2004 Том 1, 2003

International Journal for Multiscale Computational Engineering

DOI: 10.1615/IntJMultCompEng.v4.i5-6.90
pages 733-754

Statistical Properties of Local Residual Microstresses in Elastically Homogeneous Composite Half-Space

Valeriy A. Buryachenko
Civil Engineering Department, University of Akron, Akron, Ohio 44325-3901, USA and Micromechanics and Composites LLC, 2520 Hingham Lane, Dayton, Ohio 45459, USA
V. I. Kushch
Institute for Superhard Materials of the National Academy of Sciences, 04074 Kiev, Ukraine

Краткое описание

We consider a linear elastic homogeneous composite half-space, which consists of a homogeneous matrix containing a random array of inclusions. The elastic properties of the matrix and the inclusions are the same, but the stress-free strains are different. A method of integral equations is proposed for the estimation of the first and second moments of residual microstresses in the constituents of elastically homogeneous composites in a half-space with a free edge. Explicit relations for these statistical moments are obtained using a modified superposition technique and taking the binary interactions of the inclusions into account, which is expressed through the numerical solution for one inclusion in the half-space. The statistical averages of stress fluctuations varying along the inclusion cross sections are completely defined by the random locations of surrounding inclusions. The numerical results are presented for a half-plane containing random distribution of circular identical inclusions. The solution for one inclusion in the half-plane is obtained by the method of complex potential.


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