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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2015013737
pages 137-144

DYNAMICS OF A MOLTEN LAYER ON THE SURFACE OF SILICON WAFER EXPOSED TO A COMPRESSION PLASMA FLOW

Valiantsin M. Astashynski
A.V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, 15 P. Brovka Str., Minsk, 220072, Belarus; National Research Nuclear University "MEPhI" (Moscow Engineering Physics Institute), 31 Kashirskoe Highway, Moscow, 115409, Russia
Siarhei I. Ananin
A. V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, 15 P. Brovka Str., Minsk, 220072, Belarus
Evgenij A. Kostyukevich
A. V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, 15 P. Brovka Str., Minsk, 220072, Belarus
T. T. Fedzechkina
A. V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, 15 P. Brovka Str., Minsk, 220072, Belarus
S. P. Zhvavy
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus
I. E. Garkusha
Institute of Plasma Physics of the NSC KIPT, 1 Akademicheskaya Str., 61108, Kharkov, Ukraine
D. G. Solyakov
Institute of Plasma Physics of the NSC KIPT, 1 Akademicheskaya Str., 61108, Kharkov, Ukraine

Краткое описание

The lifetime of a molten layer at the surface of a silicon target exposed to a compression plasma flow was evaluated by using an optical method. The method is based on a temperature dependence of a shift in the Si fundamental absorption edge. A mathematical model describing the processes of plasma/solid interaction on the single-crystal semiconductor surface exposed to a compression plasma flow was proposed. The results of the experimental estimation of the molten layer lifetime agree satisfactorily with the data of numerical modeling.

Ключевые слова: compression plasma flow, silicon, melt lifetime

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