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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

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ISSN Печать: 1093-3611

ISSN Онлайн: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

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STRUCTURAL STUDIES ON SEMICONDUCTING HYDROGENATED AMORPHOUS SILICON OXIDE FILMS

Том 6, Выпуск 1, 2002, 19 pages
DOI: 10.1615/HighTempMatProc.v6.i1.40
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Краткое описание

In hydrogenated amorphous silicon oxide ( a-SiO:H ) films, incorporation of oxygen enhances optical gap due to a large number of St-O-Si bond formation, which lies deep into valence band states. An induction effect of this Si-O on other bonds within the network also takes place. At higher oxygen content micro-void forms and bonded hydrogen accumulates in di and/or polyhydride form. At this stage a phase separation of Si-rich and O-rich region taking place. A peak shift of absorption spectra within 1850 - 2250 cm-1 , towards higher wave number is continuous. A gradual increase and broadening of 850 cm-1 absorption band on both sides of peak position indicate higher structural disorder in network formation. It may be considered that the stretching vibration of-OH bonded to Si gives rise to 780 cm-1 absorption band. This Si-OH formation is beneficial which prevents deterioration in photosensitivity due to reduction in bonded hydrogen content. Hydrogen content is found reducing as oxygen content increases from zero to ~15 at.%. A systematic study is carried out to correlate the optoelectronic property with local atomic arrangement.

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