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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v3.i2-3.100
pages 255-261

SPATIAL DISTRIBUTION OF OPTICAL EMISSION IN SiH4/H2 RF DISCHARGES

Spyros Stamou
Plasma Chemistry Department of Chemical Engineering, University of Patras P.O.Box 1407, 26500, Patras, Greece
E. Amanatides
Plasma Technology Laboratory -Dept. of Chem. Engineering-University of Patras, P.O.Box 1407, 26500 Patra, Greece
Dimitris Mataras
Plasma Technology Laboratory -Dept. of Chem. Engineering-University of Patras, P.O.Box 1407, 26500 Patra, Greece

Краткое описание

Spatially resolved optical emission spectroscopy is used to study the variation of atomic hydrogen emission (Hβ) and SiH* (A2Δ) in the interelectrode space of a parallel plate configuration, usually employed for the deposition of amorphous or microcrystalline silicon. Space integrated emission measurements are presented as a function of power consumed in the process, for pure silane discharges and for hydrogen diluted silane discharges. Atomic hydrogen intensity profiles are also compared with the respective profiles recorded in pure hydrogen plasmas. The origin of atomic hydrogen emission and the effect of silane related gas phase chemistry on the discharge characteristics is discussed


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