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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v1.i4.20
pages 433-439

MODEL OF REACTIVE VAPORIZATION APPLIED TO THE REDUCTION OF FERROSILICON

J. M. Badie
C. N. R. S., Institut de Science et de Genie des Materiaux et Procedes B. P. 5, Odeillo, F-66125 Font-Romeu Cedex
Gilles Flamant
CNRS PROMES UPR 8521, Tecnosud, Rambla de la Thermodynamique, 66100 Perpignan, France
B. Granier
Institut de science et de Genie des Materiaux et Procedes B.P.5 Odeillo 66125 Font - Romeu, France

Краткое описание

The reduction of ferrosilicon is examined through a model of reactive vaporization. The model is based on the coupling of interfacial chemical equilibrium and mass transfer into a boundary layer of concentration. The incidence of the reduction on the behavior of the impurities in the ferrosilicon (heavy metals) is approached.


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