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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
Том 24, 2020 Том 23, 2019 Том 22, 2018 Том 21, 2017 Том 20, 2016 Том 19, 2015 Том 18, 2014 Том 17, 2013 Том 16, 2012 Том 15, 2011 Том 14, 2010 Том 13, 2009 Том 12, 2008 Том 11, 2007 Том 10, 2006 Том 9, 2005 Том 8, 2004 Том 7, 2003 Том 6, 2002 Том 5, 2001 Том 4, 2000 Том 3, 1999 Том 2, 1998 Том 1, 1997

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2016017148
pages 1-11

PROCESSES OF DEPOSITION OF AMORPHOUS METAL/CARBON FILMS OF VARIOUS ELEMENTAL COMPOSITIONS

M. V. Astashynskaya
Research Laboratory, Department of Solid State Physics, Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
Valiantsin V. Astashynski
Research Laboratory, Department of Solid State Physics, Belarusian State University, 4 Nezavisimost Ave, Minsk, 220030, Belarus
N. T. Kvasov
Research Laboratory, Department of Solid State Physics, Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
Vladimir V. Uglov
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus; National Research Tomsk Polytechnic University, 2a Lenin Ave., Tomsk, 634028, Russia

Краткое описание

The regularities of changing the elemental composition of metal/carbon Cu/a−C:H and Ni/a−C:H composite thin films formed by combining the technology of physical sputtering a metal target with plasma-enhanced chemical vapor deposition from two types of reactive gases Ar−CH2 and Ar−CH4 are considered. The material of the metal target used was of two types: nickel and copper. Two such metals possess different abilities to dissolve in the lattice of carbon. The Rutherford backscattering method allows showing the behavior of the increasing carbon concentration with the growth of the content of a reactive gas (C2H2, CH4) in Me/a−C:H thin films.


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