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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
Том 23, 2019 Том 22, 2018 Том 21, 2017 Том 20, 2016 Том 19, 2015 Том 18, 2014 Том 17, 2013 Том 16, 2012 Том 15, 2011 Том 14, 2010 Том 13, 2009 Том 12, 2008 Том 11, 2007 Том 10, 2006 Том 9, 2005 Том 8, 2004 Том 7, 2003 Том 6, 2002 Том 5, 2001 Том 4, 2000 Том 3, 1999 Том 2, 1998 Том 1, 1997

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v11.i1.90
pages 103-113

SUPER HIGH RATE DEPOSITION OF HOMO- AND HETERO-EPITAXIAL SILICON THICK FILMS BY MESO-PLASMA CVD

M. Kambara
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1, Bongo, Bunkyo-ku, Tokyo 113-8656, Japan

Краткое описание

Mesoplasma chemical vapor deposition has been demonstrated for deposition of epitaxial silicon thick films. The growth rate of the homoepitaxial films reached as fast as 60 nm/sec at temperatures around 700°C, while heteroepitaxial films on sapphire substrates were achieved at ∼ 10 nm/s at substrate temperatures ranging from 450 to 800°C. For both films, the microstructures were found to vary from agglomerated to epitaxial with an increase in the plasma power. In particular, despite the high rate, the interface between film and subsrate was observed to be atomically smooth. A simple calorimetric analysis during deposition has revealed that the boundary layer thickness between plasma and substrate reduced with increasing the power and became comparable to the mean free path of the gases when epitaxy was achieved. This potentially suggests that the formation of less agglomerated clusters / thermally activated atoms within the boundary has significant contribution to the high rate epitaxial growth. The quality of these epitaxial films was confirmed by the fact the hall mobilities reached as high as 260 cm2/V·s for homoepitaxial and 130 cm2/V·s for heteroepitaxial films, which are both comparably high in contrast to that achieved by conventional techniques.


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