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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
Том 24, 2020 Том 23, 2019 Том 22, 2018 Том 21, 2017 Том 20, 2016 Том 19, 2015 Том 18, 2014 Том 17, 2013 Том 16, 2012 Том 15, 2011 Том 14, 2010 Том 13, 2009 Том 12, 2008 Том 11, 2007 Том 10, 2006 Том 9, 2005 Том 8, 2004 Том 7, 2003 Том 6, 2002 Том 5, 2001 Том 4, 2000 Том 3, 1999 Том 2, 1998 Том 1, 1997

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2018025450
pages 299-307

MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO2 FILMS BY PHOSPHORUS DIFFUSION

Dmitrii V. Andreev
N.E. Bauman Moscow State Technical University, Kaluga Branch, 2 Bazhenov Str., Kaluga, 248000, Russia
Gennady G. Bondarenko
National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia
Vladimir V. Andreev
Bauman Moscow State Technical University, The Kaluga Branch, 2 Bazhenov Str., Kaluga, 248000, Russia
Vladimir M. Maslowsky
Zelenograd Research Institute of Physical Problems, 5 Georgievskiy Ave., Zelenograd, 124460, Russia
Alexander A. Stolyarov
N.E. Bauman Moscow State Technical University, Kaluga Branch, 2 Bazhenov Str., Kaluga, 248000, Russia

Краткое описание

We investigate the diffusion of phosphorus in thermal SiO2 films of MIS structure and influence of the process on charge effects in gate dielectric and at interfaces in Fowler–Nordheim high-field tunnel injection of electrons. One rates the cross sections of electron traps in a phosphosilicate glass (PSG) film. We show that the density of electron traps increases with increasing the PSG film thickness. The ability of using a negative charge has been established. It is accumulated in the PSG film of MIS structures with double-layer SiO2–PSG gate dielectric during high-field tunnel injection of electrons, to modify MIS devices. It is shown that the use of a double-layer SiO2–PSG gate dielectric with concentration of phosphorus in PSG film of 0.4–0.9% allows one to increase the average amount of charge injected into a dielectric until breakdown and decrease the amount of defective structures with a low amount of charge injected into the dielectric before breakdown.


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