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ISSN Печать: 0040-2508
ISSN Онлайн: 1943-6009
Indexed in
IMPACT IONIZATION IN SHORT AlZGa1-ZN-BASED DIODES
Краткое описание
The development of millimeter and terahertz wave ranges is one of the main objectives of the current radio physics. However, there are not many active nonlinear elements that can operate in those ranges. Impact ionization in wide-gap nitride-based semiconductors is a high-speed process and can be used in active elements operating at these ranges. This paper deals with the charge transport in short diodes (with active length of less than 0.3μ) based on AlzGa1-zN compounds. Here the purpose is to determine the onset conditions of impact ionization, the peculiarities, and its influence on devices characteristics. It was shown the possibility of creating the localized high field region the magnitude of which is enough for obtaining impact ionization. This also allows operating impact ionization by changing the AlzGa1-zN composition distribution in the diode. The outcome of the study is the determination of properties of impact ionization that can be used for further analysis of physical processes in the proposed structures and their manufacturing.
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Prykhodko K. H., Zozulia V. O., Botsula O. V., Graded band gap InGaAs diodes for terahertz applications, 2017 IEEE International Young Scientists Forum on Applied Physics and Engineering (YSF), 2017. Crossref
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Botsula O.V., Prykhodko K.H., GaN- based Planar Heterostructure Diodes for High Frequency Generation, 2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering (UKRCON), 2019. Crossref
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Botsula Oleg, Prykhodko Kyrylo, Sub-THz and THz Noise Generation by Diode Heterostructures under Impact Ionization, 2020 IEEE Ukrainian Microwave Week (UkrMW), 2020. Crossref
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Botsula O.V., Prykhodko K.H., Graded Band Diode for Noise Generation in Terahertz Range, 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2018. Crossref
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Botsula O. V., Prykhodko K. H., Graded Band InGaN- Based Diode for Noise Generation in Terahertz Range, 2020 IEEE Ukrainian Microwave Week (UkrMW), 2020. Crossref
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Botsula Oleg, Prykhodko Kyrylo, Zozulia Valerii, Impact Ionization in Graded Gap Transferred Electron Diode, 2021 IEEE 3rd Ukraine Conference on Electrical and Computer Engineering (UKRCON), 2021. Crossref