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S. A. Zuev
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
Articles:
Boundary Estimation of Ballistic Transport in the GaAs Devices with Submicron Dimensions - Vol. 57 '2002 - Telecommunications and Radio Engineering
A Calculation Model for Submicron Field-Effect Transistors Based on GaAs - Vol. 58 '2002 - Telecommunications and Radio Engineering
An Influence of Heat Processes on the Drift Characteristics of Semiconductor Structures - Vol. 59 '2003 - Telecommunications and Radio Engineering
Avalanche Features in Silicon Schottky-FETs in Accordance with Numerical Simulation Results - Vol. 65 '2006 - Telecommunications and Radio Engineering
Influence of Pulse Electromagnetic Fields on Current-Technology Microcontrollers - Vol. 66 '2007 - Telecommunications and Radio Engineering
Influence of Pulse Electromagnetic Fields on Integrated Memory Chips - Vol. 66 '2007 - Telecommunications and Radio Engineering
Influence of Heterogeneity of the Active Region of the MESFET on the Criterial Wunsch-Bell Dependence - Vol. 67 '2008 - Telecommunications and Radio Engineering
Numerical Simulation of Avalanche Breakdown in the GaAs MESFET - Vol. 67 '2008 - Telecommunications and Radio Engineering
THE INFLUENCE OF BIAS CURRENT UPON THE FREQUENCY CHARACTERISTICS AND STABILITY OF METAL-SCHOTTKY GATE FIELD-EFFECT TRANSISTORS (MS-GFET) - Vol. 71 '2012 - Telecommunications and Radio Engineering
EXPERIMENTAL RESEARCH OF DIFFRACTION PROPERTIES OF THIN CONDUCTING FILMS IN A WAVEGUIDE - Vol. 73 '2014 - Telecommunications and Radio Engineering
SELECTION OF KINETIC PARAMETERS FOR THE TRANSFER CURRENT IN GaAs - Vol. 73 '2014 - Telecommunications and Radio Engineering