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THERMAL TRANSPORT MODELING FOR THE SIMULATION OF HEAT TRANSFER IN MICRO/NANOSCALE DEVICES: BTE BASED APPROACH

DOI: 10.1615/ICHMT.2008.CHT.50
18 pages

Joon Sik Lee
School of Mechanical and Aerospace Engineering, Seoul National University, San 56-1. Sillim-dong Gwanak-gu. Seoul 151-742 Korea

Jae Sik Jin
School of Mechanical and Aerospace Engineering, Seoul National University, Seoul 151-744, Korea

Abstract

Recent advances in the thermal transport modeling for the simulation of non-Fourier heat conduction in sub-micron and nanoscale regimes are surveyed to provide a comprehensive review of the state-of-the-art computational techniques. Phonon transport can be described by the Boltzmann transport equations (BTE) when the particle mean free path is larger than its wavelength and the time scale is longer than the collision time. In this presentation, BTE based computational models are introduced such as the full phonon dispersion model and the electron-phonon interaction model. Then, numerical simulations on the energy transport at micro/nanoscales are discussed. Firstly, the thermal conductivity of metal thin film is predicted by the gray version of BTE with a new simple model of the reduction factor for the evaluation of the effective electron mean free path. Secondly, the thermal transport in the SOI transistor and the transient energy transport in the NMOS transistor during the electrostatic discharge (ESD) event are simulated by using the electron-phonon interaction model.

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