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NUMERICAL - EXPERIMENTAL INVESTIGATION OF CRYSTAL GROWTH RATE DEPENDENCE ON FACET UNDERCOOLING FOR DIELECTRIC CRYSTAL GROWTH FROM THE MELT

Valeriy I. Deshko
Kiev Polytechnic Institute, Kiev, Ukraine

Anton Ya. Karvatskii
Kiev Polytechnic Institute, Kiev, Ukraine

A. V. Lenkin
Kiev Polytechnic Institute, Kiev, Ukraine

V. B. Tsvetovsky
Center for Thermophysical Researches “Thermo“, Institutskaya 1, Alexandrov, Vladimir Region, 601650, Russia

S. V. Bykova
Center for Thermophysical Researches "Thermo", Institutskaya 1, Alexandrov, Vladimir Region, 601650, Russia

Vladimir D. Golyshev
Center for Thermophysical Researches “Thermo”, Institutskaya 1, Alexandrov, Vladimir Region, 601650, Russia

M. A. Gonik
Center for Thermophysical Researches “Thermo“, Institutskaya 1, Alexandrov, Vladimir Region, 601650, Russia

Abstract

Combined experimental and numerical tools are developed and used to define more exactly the growth kinetic relations for (211) crystallographic orientation of Bi4Ge3O12 (BGO) crystal growth, namely, the dependence of crystal growth rate V on supercooling, ΔT of the melt/crystal interface. New apparatus for measurements of the in situ time dependence of the supercooling, ΔT(t), was used and a new two-dimensional numerical model was applied to analyze the effect of temperature boundary conditions and faceting phenomena on the character of the observed VT) dependence. Results show that, for the variant of the crystal growth technique which was used (melt cooling during Axial Heating Process method - AHP method), the type of the VT) dependence does not depend on boundary conditions. The new investigations illustrate the superlinear behavior for VT) dependence for (211) BGO crystallographic orientation and show that previous data on sublinear behavior of VT) dependence for this crystallographic orientation of BGO have not been justified.

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