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RAD-13. Proceedings of the 7th International Symposium on Radiative Transfer
June, 2-8, 2013, Kusadasi, Turkey

DOI: 10.1615/ICHMT.2013.IntSympRadTransf


ISBN Print: 978-1-56700-280-5

ISSN Online: 2642-5629

ISSN Flash Drive: 2642-5661

PREDICTION OF THERMAL RADIATIVE PROPERTIES OF SEMICONDUCTORS FROM FIRST PRINCIPLES

pages 121-127
DOI: 10.1615/ICHMT.2013.IntSympRadTransf.100
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ABSTRACT

A method based on first-principles calculations is established to predict the thermal radiative property of semiconductors from their atomic structures. In the far-infrared band, the optical absorption is due to the photon interaction with optical phonons. The dielectric function can be obtained by parameterizing the Lorentz oscillator model. In the visible band, the optical absorption of a semiconductor is due to the electron interband transitions. The dielectric function is calculated based on the GW method and Bethe−Salpeter equation. With the dielectric function, thermal radiative properties of bulk or nanomaterials can be calculated by solving the Maxwell's equations.

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