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CHT-04 - Advances in Computational Heat Transfer III. Proceedings of the Third International Symposium
April, 19-24, 2004, on board MS Midnatsol Norwegian Coastal Voyage

DOI: 10.1615/ICHMT.2004.CHT-04


ISBN Print: 978-1-56700-174-7

ISSN: 2578-5486

Solidification and melting
INVESTIGATION OF FACET INFLUENCE ON DOPANT DISTRIBUTION AT SEMICONDUCTOR CRYSTAL GROWTH

page 13
DOI: 10.1615/ICHMT.2004.CHT-04.880
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RESUMO

An antimony doped germanium single crystal was grown by the Axial Heat Processing (AHP) method from the melt to study the facet morphological stability. With this aim the Sb concentration and crystal growth rate were changed during crystal growth. To find conditions of facet morphological instability a 2D numerical model together with experimental data were utilized to predict the facet dynamics and solute concentration features of the grown crystal. It was shown that the facet is more morphologically stable than a rough melt/crystal interface.

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