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Computational Thermal Sciences: An International Journal

Publicou 6 edições por ano

ISSN Imprimir: 1940-2503

ISSN On-line: 1940-2554

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 1.5 To calculate the five year Impact Factor, citations are counted in 2017 to the previous five years and divided by the source items published in the previous five years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) 5-Year IF: 1 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.3 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00017 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.28 SJR: 0.279 SNIP: 0.544 CiteScore™:: 2.5 H-Index: 22

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NUMERICAL SIMULATION OF THE DEPOSITION PROCESS AND THE EPITAXIAL GROWTH OF CADMIUM TELLURIDE THIN FILM IN A MOCVD REACTOR

Volume 5, Edição 3, 2013, pp. 177-188
DOI: 10.1615/ComputThermalScien.2013006321
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RESUMO

Metalorganic chemical vapor deposition (MOCVD) is an attractive method for depositing thin films of cadmium telluride (CdTe) and other group II−VI compound materials. It has been known that the growth rate of CdTe thin film is sensitive to the substrate temperature and the reactant partial pressures, indicating that the deposition process is kinetically controlled and affected by many conditions. In the deposition process, heterogeneous reactions play an important role in film formation, and the process is further complicated by the coupling of gas and surface reactions via desorption of the reactive intermediates. A detailed understanding of the deposition mechanism and kinetics will be crucial for the design, optimization, and scaling up of II−VI MOCVD reactors. This paper presents the results of computational fluid dynamics (CFD) modeling of the deposition process in an inline MOCVD reactor, taking into account the heat transfer and mass transport of the chemical species. The numerical simulations have been conducted using the CFD code, ANSYS FLUENT. The influence of the process controlling parameters such as the total flow rate, reactor pressure, and substrate temperature on the deposition behavior has been assessed. In the present study, dimethylcadmium and diisopropyltelluride have been used as precursors while H2 acts as the carrier gas and N2 as the flushing gas. The capabilities of using the developed CFD models for revealing the deposition mechanisms in MOCVD have been demonstrated. The simulations have been conducted in both mass transport and kinetics regimes at the temperature range of 355−455° to match the experimental conditions.

CITADO POR
  1. Monir Shafiul, Kartopu Giray, Barrioz Vincent, Lamb Dan, Irvine Stuart J. C., Yang Xiaogang, Vagapov Yuriy, Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment, Applied Sciences, 10, 5, 2020. Crossref

  2. Zhou Xiaosong, Wu Yiyi, Yang Xiaogang, Huang Chaowen, Numerical Analysis of an Inline Metal-Organic Chemical Vapour Deposition Process Based on Sliding-Mesh Modelling, Coatings, 10, 12, 2020. Crossref

  3. Wang Jie, He Yi-cong, Luo Tie-Cheng, Li Ya, Zhou Zheng, Fan Bing-feng, Li Jian, Wang Gang, Simulation and experimental verification study on the process parameters of ZnO-MOCVD, Ceramics International, 47, 11, 2021. Crossref

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