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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Imprimir: 1093-3611
ISSN On-line: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2015015728
pages 201-207

GENERATION OF A LOW-TEMPERATURE PLASMA OF ARC DISCHARGE AND ITS USE FOR MODIFYING THE SURFACES OF MATERIALS

Olga V. Krysina
Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, 2/3 Akademichesky Ave., Tomsk, 634055, Russia; Tomsk State University, Tomsk, Russia
I. V. Lopatin
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine
Nikolay N. Koval
Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, 2/3 Akademichesky Ave., Tomsk, 634055, Russia; National Research Tomsk State University, 36 Lenin Ave., Tomsk, 634050, Russia
V. V. Shugurov
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences, 2/3 Akademicheskii Ave., Tomsk, 634055, Russia; National Research Tomsk State University, 36 Lenin Ave., Tomsk, 634050, Russia
S. S. Kovalskyy
Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, 2/3 Akademichesky Ave., Tomsk, 634055, Russia; National Research Tomsk State University, 36 Lenin Ave., Tomsk, 634050, Russia
E. A. Petrikova
Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, 2/3 Akademichesky Ave., Tomsk, 634055, Russia

RESUMO

The parameters of a gas plasma generated by a low-pressure arc discharge were measured by the Langmuir probe method depending on the gas discharge parameters. Their influence on the etching rate and surface layer properties have been revealed.


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