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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Imprimir: 1093-3611
ISSN On-line: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v4.i4.110
12 pages

PLASMA PROCESSES IN PV SOLAR CELLS (a-Si:H)

R. Avni
Euro-Consultants (Israel), 10 Dov Friedman St. Ramat Gan, Israel

RESUMO

The state of the art of amorphous silicon thin films deposited in PECVD processes for solar cells applications is reviewed . Precursors such as silane, tri and tetra chloro-silane as monomers in Ar, H2 and Ar+H2 gas mixtures or pure silane plasmas were mainly used in the deposition of amorphous or micro-crystalline Si thin films. Reactions kinetics in the plasma bulk and in the plasma surface (solid) interactions as measured by mass spectrometry in real time, on line, show the governing species the particulate contamination's and the rate determining steps in the deposition process. The degradation of a-Si:H solar cells at intense illumination i.,e.,at elevated temperatures and the inhibition of the degradation processes by the addition of Ar to the silane plasmas will be discussed.


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