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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Imprimir: 1093-3611
ISSN On-line: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2015015608
pages 269-272

EFFICIENCY OF SILICON LASER ABLATION IN AIR ON BICHROMATIC PULSE IRRADIATION

A. N. Chumakov
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus
Nikolay A. Bosak
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus
Pavel I. Verenich
B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus

RESUMO

The work is devoted to elucidating the silicon ablation regularities under bichromatic laser radiation at wavelengths of 532 nm and 1064 nm with a controllable order of laser pulses and time delay between them. A manifold increase in the specific mass removal of silicon has been revealed under irradiation with leading 532 nm nanosecond laser pulses followed by 1064-nm pulses with time delay from 3 to 8 µs.


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