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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Imprimir: 1093-3611
ISSN On-line: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v7.i3.30
pages 307-312

PURIFICATION AND HYDROGENATION OF METALLURGICAL SILICON POWDER BY RF THERMAL PLASMA. CHARACTERIZATION OF THE DEPOSIT

M. Benmansour
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05
M. Nickravech
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
E. Francke
Laboratoire de Génie Procédés Plasmas et Traitement de Surface, Université Pierre et Mane Curie- ENSCP 11-13, rue Pierre et Marie Curie 75231 Paris Cedex 05 France
Daniel Morvan
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
D. Ballutaud
Laboratoire de Physique des Solides et de Cristallogenese, CNRS, 1 place Aristide Briand, F-92195 Meudon CEDEX, France

RESUMO

Plasma deposition process of metallurgical grade silicon powders was used in order to combine purification and deposition processes onto different kinds of substrate with a high deposition rate (≈ 100 μm.mn−1). The particles are heated, melted, partially vaporised and finally deposited on a substrate. Under optimised experimental conditions dense deposits are obtained on ceramic substrate with a thickness close to 1 mm. Except the final crystallised zone, EDX and ICP analysis show that the deposits have good purity. However, because of a fast crystallisation, several crystalline defects have been observed. Introduction of hydrogen was used in order to passive this defects and to increase the photovoltaic properties.