High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
Publicou 4 edições por ano
ISSN Imprimir: 1093-3611
ISSN On-line: 1940-4360
IF:
0.4
Immediacy Index:
0.1
Eigenfactor:
0.00005
JCI:
0.07
SJR:
0.198
SNIP:
0.48
CiteScore™::
1.1
H-Index:
20
Indexed in
PASSIVATION OF POLYCRYSTALLINE SILICON BY HYDROGEN PLASMA : CHARACTERIZATION BY IMPEDANCE SPECTROSCOPY
Volume 9,
Edição 2, 2005,
pp. 269-277
DOI: 10.1615/HighTempMatProc.v9.i2.90
RESUMO
Hydrogenation of silicon materials has attracted a great advantage for its photovoltaic properties. In this paper, we investigated the effects of hydrogen plasma treatment on the structure and properties of silicon surface. The electrical conductivity is measured before and after plasma exposure by impedance spectroscopy on solid indicating a promising method. We observed a strong dependence between measurements and operational conditions (temperature, atmosphere, ...). SIMS, and deuterium effusion are used in order to confirm the impedance measurements. The surface roughness is also evaluated by AFM.
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