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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Imprimir: 1093-3611
ISSN On-line: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2019031964
pages 313-318

SIMULATION OF ANNEALING AND THE ELDRS IN p-MNOS RadFETs

Elizaveta V. Mrozovskaya
National Research Nuclear University MEPhI, Moscow, Russia
Petr A. Zimin
National Research Nuclear University MEPhI, Moscow, Russia
Pavel A. Chubunov
National Research Nuclear University MEPhI, Moscow, Russia
Gennady I. Zebrev
National Research Nuclear University MEPhI, 31 Kashirskoye Highway, Moscow, 115409, Russia
Vladimir M. Maslovsky
Department of Micro- and Nanoelectronics, Moscow Institute of Physics and Technology (State University), 9 Institutskii Lane, Dolgoprudnyi, Moscow Region, 141700 Russia

RESUMO

The manifestation of simultaneous annealing in p-MNOS (metal-nitride-oxide-semiconductor) samples with thick oxide and a pronounced effect of enhanced low-dose-rate sensitivity (ELDRS) are investigated. The simulation was based on experimental data.

Referências

  1. Holmes-Siedle, A.G. and Adams, L., RadFET: A Review of the Use of Metal-Oxide-Silicon Devices as Integrating Dosimeters, Int. J. Radiat. Appl. Instrum., Part C, vol. 28, no. 2, pp. 235-244, 1986.

  2. Jaksic, A., Ristic, G., Pejovic, M., Mohammadzadeh, A., Sudre, C., and Lane, W., Gamma-Ray Irradiation and Post-Irradiation Responses of High Dose Range RadFETs, IEEE Trans. Nucl. Sci., vol. 49, no. 3, pp. 1356-1363, 2002.

  3. Schwank, J.R., Roeske, S.B., Buetler, D.E., Moreno, D.J., and Shaneyfelt, M.R., A Dose Rate Independent p-MNOS Dosimeter for Space Applications, IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2671-2678, 1996.

  4. Zebrev, G.I. and Drosdetsky, M.G., Temporal and Dose Kinetics of Tunnel Relaxation of Non-Equilibrium Near-Interfacial Charged Defects in Insulators, IEEE Trans. Nucl. Sci., vol. 63, no. 6, pp. 2895-2902, 2016.

  5. Zebrev, G.I., Modeling and Simulation of the Enhanced Low-Dose-Rate Sensitivity of Thick Isolating Layers in Advanced ICs, Russian Microelectronics, vol. 35, no. 3, pp. 177-184, 2006.

  6. Zimin, P.A., Anashin, V.S., Chubunov, P.A., Meschurov, O.V., Useinov, R.G., Uzhegov, V.M., and Zebrev, G.I., ELDRS in p-MOS- and p-MNOS-based RadFETs with Thick Gate Insulators: Experiment and Simulation, RADECS 2018, Proc. of RADECS 2018, Gothenburg, Sweden, 2018.

  7. Zimin, P.A., Mrozovskaya, E.V., Chubunov, P.A., Anashin, V.S., and Zebrev, G.I., Calibration and Electric Characterization of p-MNOS RadFETs at Different Dose Rates and Temperatures, Nuclear Inst. Methods Phys. Res., vol. 940, pp. 307-312, 2019.


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