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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Imprimir: 1093-3611
ISSN On-line: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v1.i3.80
pages 383-391

IMPROVEMENTS IN CONTROL AND UNDERSTANDING OF RADIO FREQUENCY SILANE DISCHARGES

Dimitris Mataras
Plasma Technology Laboratory -Dept. of Chem. Engineering-University of Patras, P.O.Box 1407, 26500 Patra, Greece
Dimitrious E. Rapakoulias
Plasma Technology Lab, Dept. Chem. Engineering, University of Patras, P.O.Box 1407, 26500 Patra, Greece

RESUMO

Experimental data concerning power and feed gas consumption in rf silane discharges, based on simultaneous voltage and current measurements with mass spectrometry are reported. These measurements are used for the calculation of the power needed for a given silane conversion and for the determination of the electron impact dissociation rate constant, for two different gas pressures. Moreover, the data obtained, along with radical generation profiles, deduced from spatially resolved laser induced fluorescence measurements, are applied in a mathematical model used to predict the precursor concentration profiles in space and the deposition rate due to each of the radicals. The results show that SiH3 is the most abundant radical, although SiH2 is the major dissociation product, due to the different gas-phase reactivity of these two species. However, due to the different film growth mechanism for each precursor, SiH2, as well as SiH and Si seem to have an almost equally important contribution with SiH3.


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