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Heat Transfer Research
Fator do impacto: 0.404 FI de cinco anos: 0.8 SJR: 0.264 SNIP: 0.504 CiteScore™: 0.88

ISSN Imprimir: 1064-2285
ISSN On-line: 2162-6561

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Heat Transfer Research

DOI: 10.1615/HeatTransRes.2018021867
pages 881-898

EMISSIVITY MODEL OF ALUMINUM 6063 WITH AN OXIDE FILM AT A WAVELENGTH OF 1.5 μm IN THE TEMPERATURE RANGE 800–910 K

Wei Xing
College of Physics and Material Science, Henan Normal University, Xinxiang 453007, China
Deheng Shi
College of Physics and Material Science, Henan Normal University, Xinxiang 453007, China
Zunlue Zhu
College of Physics and Material Science, Henan Normal University, Xinxiang 453007, China
Jinfeng Sun
College of Physics and Material Science, Henan Normal University, Xinxiang 453007, China

RESUMO

This paper models the variation of emissivity with temperature or/and surface oxidation. The emissivity measurements were done at a wavelength of 1.5 μm over the temperature range from 800 to 910 K. The sample was heated to a certain temperature in air and kept at that temperature for approximately 6 h during the experiment. The radiation was received by an InGaAs detector. The surface temperature of samples was measured by two thermocouples, which were symmetrically welded on the surface of the samples. The average of their readings was regarded as the true temperature. Eleven models were used to investigate the variation of emissivity with growth of an oxide layer on the sample surface at a certain temperature. The effect of the number of parameters used in the models on the fitting quality was evaluated. The fitting quality of the emissivity models with the same number of parameters was compared. The variation of emissivity with temperature was studied at a certain thickness of the oxide film. Three approximate models were used to explore the variation in emissivity with temperature and thickness of the oxide layer, with two of them being found to accurately reproduce the emissivity. The strong oscillations of emissivity were observed during the initial heating period, which were affirmed to arise from the interference effect between the two radiations stemming from the oxide film and coming from the substrate.


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