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Heat Transfer Research
Fator do impacto: 0.404 FI de cinco anos: 0.8 SJR: 0.264 SNIP: 0.504 CiteScore™: 0.88

ISSN Imprimir: 1064-2285
ISSN On-line: 2162-6561

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Heat Transfer Research

DOI: 10.1615/HeatTransRes.v38.i1.70
pages 71-84

Numerical Modeling of Heat and Mass Transfer Processes in PECVD Reactors for Growing Silicon Films under the Conditions of Intense Formation of Higher Silanes in the Gas Phase

Yuriy E. Gorbachev
Institute of High-Performance Computations and Databases of the St. Petersburg State Polytechnic University, Russian Federation
M. A. Zatevakhin
Institute of High-Performance Computations and Databases of the St. Petersburg State Polytechnic University, Russian Federation
A. A. Ignatiev
Institute of High-Performance Computations and Databases of the St. Petersburg State Polytechnic University, Russian Federation
Valeria Krzhizhanovskaya
University of Amsterdam, The Netherlands

RESUMO

A model of the process of growth of an amorphous silicon film from HF discharge silane plasma in plasma-chemical reactors has been developed. The model takes into account homogeneous chemical reactions, deposition of radicals on the walls, diffusion, convection, and formation of higher silanes. A parallel algorithm for computations on multi-processor systems has been built. A software complex has been created for 3Dcomputations. Processes affecting the film growth have been investigated.


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