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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

年間 4 号発行

ISSN 印刷: 1093-3611

ISSN オンライン: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

Indexed in

PLASMA PROCESSES IN PV SOLAR CELLS (a-Si:H)

巻 4, 発行 4, 2000, 12 pages
DOI: 10.1615/HighTempMatProc.v4.i4.110
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要約

The state of the art of amorphous silicon thin films deposited in PECVD processes for solar cells applications is reviewed . Precursors such as silane, tri and tetra chloro-silane as monomers in Ar, H2 and Ar+H2 gas mixtures or pure silane plasmas were mainly used in the deposition of amorphous or micro-crystalline Si thin films. Reactions kinetics in the plasma bulk and in the plasma surface (solid) interactions as measured by mass spectrometry in real time, on line, show the governing species the particulate contamination's and the rate determining steps in the deposition process. The degradation of a-Si:H solar cells at intense illumination i.,e.,at elevated temperatures and the inhibition of the degradation processes by the addition of Ar to the silane plasmas will be discussed.

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