High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
年間 4 号発行
ISSN 印刷: 1093-3611
ISSN オンライン: 1940-4360
IF:
0.4
Immediacy Index:
0.1
Eigenfactor:
0.00005
JCI:
0.07
SJR:
0.198
SNIP:
0.48
CiteScore™::
1.1
H-Index:
20
Indexed in
PROCESSES OF DEPOSITION OF AMORPHOUS METAL/CARBON FILMS OF VARIOUS ELEMENTAL COMPOSITIONS
巻 20,
発行 1, 2016,
pp. 1-11
DOI: 10.1615/HighTempMatProc.2016017148
要約
The regularities of changing the elemental composition of metal/carbon Cu/a−C:H and Ni/a−C:H composite thin films formed by combining the technology of physical sputtering a metal target with plasma-enhanced chemical vapor deposition from two types of reactive gases Ar−CH2 and Ar−CH4 are considered. The material of the metal target used was of two types: nickel and copper. Two such metals possess different abilities to dissolve in the lattice of carbon. The Rutherford backscattering method allows showing the behavior of the increasing carbon concentration with the growth of the content of a reactive gas (C2H2, CH4) in Me/a−C:H thin films.
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