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Journal of Flow Visualization and Image Processing
SJR: 0.161 SNIP: 0.312 CiteScore™: 0.1

ISSN 印刷: 1065-3090
ISSN オンライン: 1940-4336

Journal of Flow Visualization and Image Processing

DOI: 10.1615/JFlowVisImageProc.v21.i1-4.50
pages 47-50

VISUALIZATION IN NANOTECHNOLOGY: LOW-K MATERIALS

Alexander P. Palov
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow 119991, Russian Federation
Tatyana V Rakhimova
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow 119991, Russian Federation

要約

Porous dielectric materials with low dielectric constants (low-k, k = 1.8−2.5 have been used in integrated circuits for a long time to reduce RC time delays. Typical pores in low-k films are of size from 0.8 nm to 3.6 nm and can be observed with a scanning electron microscope. Normally, two-frequency discharge plasma is applied to modify surface of low-k films to output trenches with high aspect ratio for the following filling them with copper. Two main physical mechanisms of interaction of ions and radicals with dielectric surfaces are sputtering and etching. 3D modeling is widely used to understand what is happening during etching process and to optimize etching technology. Postprocessing is important to see how films are changed during different stage of sputtering and etching. We found ScientificVR® very helpful for these purposes.