Nanoscience and Technology: An International Journal
年間 4 号発行
ISSN 印刷: 2572-4258
ISSN オンライン: 2572-4266
IF:
1.3
5-Year IF:
1.7
Immediacy Index:
0.7
Eigenfactor:
0.00023
JCI:
0.11
SJR:
0.244
SNIP:
0.521
CiteScore™::
3.6
H-Index:
14
Indexed in
COMBINED INFLUENCE OF GENERATION AND COAGULATION OF NANOSIZED CRITICAL NUCLEI IN SUPERSATURATED SOLUTIONS
巻 7,
発行 4, 2016,
pp. 305-310
DOI: 10.1615/NanomechanicsSciTechnolIntJ.v7.i4.30
要約
The combined influence of generation and coagulation of nanosized critical nuclei on the concentration of nuclei and, ultimately, on the process of scale formation in supersaturated aqueous solutions is considered. It is taken into account that coagulation of nuclei is accompanied by continuous generation and dissolution of them in the bulk water. The estimates obtained showed that the rate of coagulation of nanosized critical nuclei is much smaller than that of their generation. A modified Smolukhovsky formula for calculating the dependence of the concentration of colloidal particles on time n(t) with account for their generation and coagulation is suggested.
506 記事の閲覧数
9 記事のダウンロード
記事の統計
類似内容の記事:
近刊の記事
Numerical investigation on multistage bifurcated Rectangular Microchannel with asymmetrical heatflux using Nanofluid
Effects of rotational modulation on convection in ethylene glycol based hybrid nanofluids with internal heating
Preparation and Thermoelectric Properties of Bi2Te(3-x)Sex Samples by High Energy Ball Milling and Spark Plasma Sintering Method
Statistical analysis of Sisko Nanofluid with Hall and Ion Slip Effect over Porous Medium
Preparation and Characterization of Nano-Cellulose Powder from Oil Palm Empty Fruit Bunch as Green Nanofluids
Influence of Hybrid Nanofluids and Source Configuration on Natural Convection in square cavity
The Preparation of Nanoparticle Films Based on Light Welding Technology
FIRST-PRINCIPLES CALCULATION OF STRUCTURAL, ELECTRONIC, AND OPTICAL PROPERTIES OF INP1-XSBX USING WC-mBJ FOR NANOSCALE IR APPLICATIONS
On organization of drainage of radiation defects from working area of an integrated circuit