要約

The structural model of lateral amorphous crystal unifications within a crystal silicon semiconductor is considered. The process of their formation includes various technological operations related to radiation amorphization of the silicon crystal structure with the fragments from the fission of uranium nuclei and hydrogenation of the structure, gamma-transmutation of silicon nuclei into aluminum, recovering of the crystal structure properties outside of the amorphous phase domain and the synthesis of the protecting illuminating coatings from the diamond-like carbon structures with sp²−sp³ electron hybridization.