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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v53.i4-5.290
pages 179-183

A Quasi-2D Model of Carrier Trapping in a GaAs MESFET Structure

M. B. Gorev
Dnipropetrovsk Institute of Technical Mechanics, Ukraine
Yu. A. Kovalenko
Dnipropetrovsk Institute of Technical Mechanics, Ukraine
I. F. Kodzhespirova
Dnipropetrovsk Institute of Technical Mechanics, Ukraine
Ye. F. Prokhorov
Dnipropetrovsk Institute of Technical Mechanics, Ukraine

要約

We propose a simple quasi-2D model for trapping mechanism of carriers from the gate strong-field static domain in the film to vacant deep centers in the buffer layer and the substrate for the GaAs field transistor with a Schottky gate. Typical calculation results are presented.


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