RT Journal Article ID 3c3f442336065f26 A1 Stamou, Spyros A1 Amanatides, E. A1 Mataras, Dimitris T1 SPATIAL DISTRIBUTION OF OPTICAL EMISSION IN SiH4/H2 RF DISCHARGES JF High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes JO HTM YR 1999 FD 1999-12-20 VO 3 IS 2-3 SP 255 OP 261 AB Spatially resolved optical emission spectroscopy is used to study the variation of atomic hydrogen emission (Hβ) and SiH* (A2Δ) in the interelectrode space of a parallel plate configuration, usually employed for the deposition of amorphous or microcrystalline silicon. Space integrated emission measurements are presented as a function of power consumed in the process, for pure silane discharges and for hydrogen diluted silane discharges. Atomic hydrogen intensity profiles are also compared with the respective profiles recorded in pure hydrogen plasmas. The origin of atomic hydrogen emission and the effect of silane related gas phase chemistry on the discharge characteristics is discussed PB Begell House LK https://www.dl.begellhouse.com/journals/57d172397126f956,71c1fd960da08ae9,3c3f442336065f26.html