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International Journal for Multiscale Computational Engineering

Published 6 issues per year

ISSN Print: 1543-1649

ISSN Online: 1940-4352

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 1.4 To calculate the five year Impact Factor, citations are counted in 2017 to the previous five years and divided by the source items published in the previous five years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) 5-Year IF: 1.3 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 2.2 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00034 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.46 SJR: 0.333 SNIP: 0.606 CiteScore™:: 3.1 H-Index: 31

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Toward Multiscale Modeling of Carbon Nanotube Transistors

Volume 2, Issue 2, 2004, 21 pages
DOI: 10.1615/IntJMultCompEng.v2.i2.60
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ABSTRACT

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube electronics. We focus in this paper on one element of that hierarchy, the simulation of ballistic CNTFETs by self-consistently solving the Poisson and Schrödinger equations using the nonequilibrium Green's function (NEGF) formalism. The NEGF transport equation is solved at two levels: i) a semiempirical atomistic level using the pz orbitals of carbon atoms as the basis, and ii) an atomistic mode space approach, which only treats a few subbands in the tube's circumferential direction while retaining an atomistic grid along the carrier transport direction. Simulation examples show that these approaches describe quantum transport effects in nanotube transistors. The paper concludes with a brief discussion of how these semiempirical device-level simulations can be connected to ab initio, continuum, and circuit level simulations in the multiscale hierarchy.

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  200. Tamersit Khalil, Madan Jaya, Kouzou Abdellah, Pandey Rahul, Kennel Ralph, Abdelrahem Mohamed, Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison, Nanomaterials, 12, 10, 2022. Crossref

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  209. Tamersit Khalil, Bourouba Hocine, Kouzou Abdellah, Improving the Current Ratio and Ambipolar Behavior of Junctionless CNTFETs Using Graded Metal Gate Work Function: A Quantum Simulation, 2022 19th International Multi-Conference on Systems, Signals & Devices (SSD), 2022. Crossref

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