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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Published 4 issues per year

ISSN Print: 1093-3611

ISSN Online: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

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DIFFERENCES BETWEEN AMORPHOUS AND NANOSTRUCTURED SILICON FILMS AND THEIR APPLICATION IN SOLAR CELL

Volume 11, Issue 4, 2007, pp. 575-583
DOI: 10.1615/HighTempMatProc.v11.i4.90
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ABSTRACT

Nanostructured silicon thin films were produced in a single PECVD (Plasma Enhanced Chemical Vapour Deposition) reactor using an excitation frequency of 27.12 MHz. The process parameters were selected to allow the films' production to be performed at the transition region (from amorphous to microcrystalline), aiming their use in solar cells. The real and imaginary parts of pseudo-dielectric function of these nanostructured films show a shift to higher energies and the order factor reveals an improvement on the short atomic range order of the films produced. The solar cells with a structure of ZGO/p-a-SiC:H/buffer1/buffer2/i-(nc/a-Si:H)/n-a-Si:H/Ag/Al were deposited with nanostructured intrinsic layer, showing a good performances, with current densities of about 14.48 mA/cm2, open circuit voltage of 0.94 V, and fill factor of 0.67, which lead to efficiencies of 9.12%. The solar cell degradation study performed under AM1.5 spectrum conditions up to 100 hours revealed a decrease on the solar cell efficiency of about 8.11%, mainly related to the decreasing of current density. Despite that, the open circuit voltage increases slightly after the degradation.

CITED BY
  1. Wang Keda, Han Daxing, Yue Guozhen, Yan Baojie, Yang Jeffrey, Guha Subhendu, Light-induced increase of nonradiative recombination centers in hydrogenated nanocrystalline silicon solar cells under reverse electric bias, Applied Physics Letters, 95, 2, 2009. Crossref

  2. Shalav Avi, Photovoltaics literature survey (no. 62), Progress in Photovoltaics: Research and Applications, 16, 4, 2008. Crossref

  3. Martins R., Raniero L., Pereira L., Costa† D., Águas H., Pereira S., Silva L., Gonçalves A., Ferreira I., Fortunato E., Nanostructured silicon and its application to solar cells, position sensors and thin film transistors, Philosophical Magazine, 89, 28-30, 2009. Crossref

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