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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Print: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v13.i3-4.130
pages 413-425

CATALYCITY AND AGEING STUDY OF SPACE SHUTTLE MATERIAL: REGENERATION OF THEIR ORIGINAL CATALYTIC PROPERTIES

G. Da Rold
Laboratoire de Génie des Precédés Plasmas et Traitements de Surfaces (EA 3492), (ENSCP-Pierre et Marie Curie University) Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre & Marie Curie, 75231 Paris Cedex − France
C. Guyon
Laboratoire de Génie des Procédés Plasmas et Traitement de Surfaces, Universite Pierre & Marie Curie, 11 rue Pierre et Marie Curie, 75231 Paris Cedex, France
S. Cavadias
Laboratoire Genie Precedes Plasmas - ENSCP 11, rue Pierre et Marie Curie - 75005 Paris- France
Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
V. Micheli
Divisione Fisica e Chimica delle Superfici e Interfacce Fondazione Bruno Kessler Via Santa Croce 77, 38100 Trento, Italia
N. Laidani
Divisione Fisica e Chimica delle Superfici e Interfacce Fondazione Bruno Kessler Via Santa Croce 77, 38100 Trento, Italia

ABSTRACT

The heating of the space vehicle during the re-entry phase and the oxidation of the material surface leads to the loss of protective properties. The atmospheric re-entry conditions are recreated with a non equilibrium low pressure RF plasma and the relative oxygen atom concentration is measured by Actinometric Optical Spectroscopy. Silicon carbide targets polluted with metallic species show different degrees of reactivity than SiC alone [1].
In this work a systematic study of SiC oxidation at high temperature (1100K) has been performed in order to determine kinetic and the oxidation mechanisms. Also the role of chromium oxide as a diffusion barrier into the bulk is examined [2]. In order to determine the oxidation mechanisms the isotopic oxygen O218 has been used, in targets with different deposition layers at different times ranging from 10 to 30 min and the formation of CO, CO2 and SiO, during the ablation has been followed by mass spectrometry analysis. Surface oxidation and Oxygen diffusion in the material bulk was measured by Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS) [3], secondary ion mass spectroscopy (SIMS).
Besides the recombination of oxygen atoms, the ablation of the material and the diffusion of oxygen coming from the gas phase in the bulk of this material have been pointed out.
The results show that at 1300K the kinetic of oxidation is faster than at 1000K. In this range of temperatures chromium oxide remains stable and limits the diffusion of oxygen.


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