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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Published 4 issues per year

ISSN Print: 1093-3611

ISSN Online: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

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MODEL OF FORMATION OF SURFACE STATES IN MOS TRANSISTORS UNDER INFLUENCE OF SPACE RADIATION PROTONS

Volume 21, Issue 4, 2017, pp. 317-323
DOI: 10.1615/HighTempMatProc.2018025557
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ABSTRACT

The paper analyzes modern physical models of the formation of surface states based on the mechanisms inherent in nanosized MOS transistors and identifies the most relevant model. The paper shows that this model, despite its advantages, does not take into account the possible influence of cosmic radiation on the formation of surface states in the MOS transistors. We theoretically substantiate the possibility of the influence of cosmic-ray protons on the formation of surface states in the MOS transistors by mechanisms differing from those suggested by the McLean model. We propose a model of the formation of surface states in the MOS transistors under the influence of cosmic-ray protons.

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