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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Print: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2018025557
pages 317-323

MODEL OF FORMATION OF SURFACE STATES IN MOS TRANSISTORS UNDER INFLUENCE OF SPACE RADIATION PROTONS

Artem N. Volkov
Zelenograd Research Institute of Physical Problems, 5 Georgievskiy Ave., Zelenograd, 124460, Russia
Dmitrii V. Andreev
N.E. Bauman Moscow State Technical University, Kaluga Branch, 2 Bazhenov Str., Kaluga, 248000, Russia

ABSTRACT

The paper analyzes modern physical models of the formation of surface states based on the mechanisms inherent in nanosized MOS transistors and identifies the most relevant model. The paper shows that this model, despite its advantages, does not take into account the possible influence of cosmic radiation on the formation of surface states in the MOS transistors. We theoretically substantiate the possibility of the influence of cosmic-ray protons on the formation of surface states in the MOS transistors by mechanisms differing from those suggested by the McLean model. We propose a model of the formation of surface states in the MOS transistors under the influence of cosmic-ray protons.


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