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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Print: 1093-3611
ISSN Online: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v7.i4.80
pages 535-546

OPTICAL SPECTROSCOPIC DIAGNOSTIC OF AN Ar+H2 RF THERMAL PLASMA USED TO THE SILICON POWDER PURIFICATION. EFFECT OF THE EVAPORATION PHENOMENA

M. Benmansour
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05
M. Nikravech
Laboratoire de Genie des Precedes Plasmas et Traitement de Surfaces, Universite P. et M. Curie, Ecole Nationale Superieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75005 Paris, France
S. Darwiche
Laboratoire de Genie des Procedes Plasmas et Traitement de Surface - Université Pierre et Mane Curie- ENSCP 11-13, rue Pierre et Marie Curie 75231 Paris Cedex 05 France
J. Chapelle
LASEP, Centre Universitaire de Bourges, Rue Gaston Berger, BP 4043, 18028 Bourges Cedex, France
Daniel Morvan
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France

ABSTRACT

Ar+H2 RF thermal plasma spraying is used to melt, purify and hydrogenate metallurgical silicon particles in order to elaborate a thin layer for photovoltaics applications. Hydrogenation and purification phenomena have been analysed by a spectroscopic diagnostic. Transitions of excited argon, hydrogen and silicon detected have been used to calculate the electronic density, electronic temperature and silicon vapor content in the plasma flow.


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