Begell House Inc.
Telecommunications and Radio Engineering
TRE
0040-2508
77
1
2018
THE SCHWARZ METHOD APPLICATION TO THE CALCULATION OF WAVEGUIDE PHASED ARRAYS IN THE PRESENCE OF DIELECTRIC INSERTIONS AND COATING
1-11
10.1615/TelecomRadEng.v77.i1.10
M. A.
Gnatyuk
Dniprovsk State Technical University, 2 Dniprobudivska St., Kamyanske 51918,
Dnipropetrovska Region, Ukraine
V. M.
Morozov
Dniprovsk State Technical University, 2 Dniprobudivska St., Kamyanske 51918,
Dnipropetrovska Region, Ukraine
antenna arrays
waveguide phase shift
dielectric insertion
The Schwartz method application for solving the problem of diffraction of an electromagnetic wave by a linear phased array antenna in H-plane scanning is considered. Problem is reduced to the solution of the Fredholm integral equation of the second kind by the successive approximation method. Expressions are obtain for the reflection coefficient of the incident wave in the i-order approximation
MICROWAVE PULSE RADIATOR WITH PASSIVE COMPRESSION OF INPUT SIGNAL
13-25
10.1615/TelecomRadEng.v77.i1.20
V. L.
Pazynin
O.Ya. Usikov Institute for Radio Physics and Electronics,
National Academy of Sciences of Ukraine
12, Academician Proskura St., Kharkiv 61085, Ukraine
passive compression
pulse radiator
FDTD method
On an example of the simplest dispersive waveguide radiator, the possibility of efficient compression of the radiated electromagnetic pulse in its aperture is demonstrated. The rigorous calculation technique of the time profile of an input signal of the radiator which at a given (target) point of space will have a predetermined form is proposed. This technique takes into account the energy loss that the pulse experiences when propagating to the objective point, and the dispersion of the particular sections of its wave path. The obtained results can be useful when solving problems of the subsurface sounding.
ANALYSIS AND DESIGN OF A TRIPLE BAND-NOTCHED UWB ANTENNA BASED ON COMPLEMENTARY SPLIT RING RESONATOR
27-38
10.1615/TelecomRadEng.v77.i1.30
A.
Nacer
University of Tlemcen, BP 230 - 13000 Chetouane Tlemcen, Algeria
N. Boukli
Hacene
University of Tlemcen, BP 230 - 13000 Chetouane Tlemcen, Algeria
metamaterials
complementary split ring resonator
antenna
UWB
notched band
In this paper, an ultra-wideband (UWB) antenna with triple band notched characteristics is presented. The proposed reference antenna is composed of a circular radiating patch, a 50 Ω microstrip feed line, and a partially modified ground plane to enhance the impedance bandwidth. Two CSRRs are used to achieve the stop band function. A single CSRR is
incorporated in the radiator to notch a bandwidth from 3.3 to 4.3 GHz for both WiMAX and C-band. The WLAN (5-6 GHz) and the X-band (7.25-8.4 GHz) are rejected by etching a codirectional CSRR in the ground plane with a CSRR slot in the substrate as method to improve the rejection level. The key parameters of CSRRs are investigated and exploited in the optimization process. Simulated results show that the proposed antenna has a wide impedance bandwidth (2.8–13.2 GHz), stable radiation patterns, and constant gain which make it a promising candidate for UWB applications with band notched features.
DETERMINING THE DEPENDENCE OF PHOTONIC BAND GAP CHARACTERISTICS ON THE MATERIAL REFRACTIVE INDEX
39-46
10.1615/TelecomRadEng.v77.i1.40
O. I.
Filipenko
Kharkiv National University of Radio Engineering and Electronics, 14 Nauka Ave,
Kharkiv, 61166, Ukraine
O. M.
Donskov
Kharkiv National University of Radio Engineering and Electronics, 14 Nauka Ave,
Kharkiv, 61166, Ukraine
photonic crystal
power flux
penetration
optical radiation
Propagation of electromagnetic waves in a photonic crystal made of GaAs was considered. The propagation of the transverse component of the electromagnetic radiation (TE-wave) in the
wavelength range from 0.2 to 2 microns was also considered. Dependence of the characteristics of the photonic band gap on the refractive index of the used material was defined.
INFRARED RECEIVER ON ELECTRON TRANSITIONS INTO THE AUTOLOCALIZED STATE OVER THE HELIUM FILM ON THE STRUCTURED SUBSTRATE
47-60
10.1615/TelecomRadEng.v77.i1.50
V. A.
Nikolaenko
B. Verkin Institute for Low Temperature Physics and Engineering, National
Academy of Sciences of Ukraine, 47 Nauka Ave., Kharkiv, 61103, Ukraine
A. G.
Pashchenko
Kharkiv National University of Radio Engineering and Electronics, 14 Nauka Ave,
Kharkiv, 61166, Ukraine
Ya. Yu.
Bessmolny
B. Verkin Institute for Low Temperature Physics and Engineering, National
Academy of Sciences of Ukraine, 47 Nauka Ave., Kharkiv, 61103, Ukraine
autolocalized state
helium film
structured substrate
absorbing coating
surface electrons
To construct an IR receiver, it is proposed to use a radiation-stimulated threshold transition from the state of the surface electron (SE) to the state of the surface anion (SA) over the helium film in the pores of the structured substrate. The transition depends on the thickness of the film, electric field, and density of the vapor phase. The electron mobility in the SE / SA transition
corresponds to the theoretical analysis. The electrostatic model of a cylindrical pore in a longitudinal field demonstrates the preferential localization of electrons over the film inside the pore. The IR image is determined by the equipotential relief of the substrate, induced by the
contrast of the electrons conductivity in the pores. The frequency range and sensitivity of the receiver are determined by the thermal sensitivity to the radiation of the pore walls and the operating temperature, reaching the quantum limit. The design and operation of the IR receiver
are given.
CALCULATION OF THE ABSORBING CAPACITY OF A SOLAR CuIn1-XGaXSe2 PHOTOVOLTAIC CONVERTER
61-67
10.1615/TelecomRadEng.v77.i1.60
A. B.
Galat
Kharkiv National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine
absorption
solar element
quantum efficiency
heterostructure
The analytical model, taking into account the spectral distribution of the absorption coefficients of active layers, is used to calculate the absorption efficiency of a photoconverter based on CuIn1-XGaXSe2 using CdS as a buffer layer. The regularities of the change in the absorptivity in
a wide range of changes in the thickness of layers for the spectrum of 0.3–1.4 μ;m AM 1.5 are established. A refinement of the estimates of the absorption efficiency for structures and analogous ones is proposed.
ANALYSIS OF FUNCTIONAL DEPENDENCES OF OPTICAL FLOW
69-75
10.1615/TelecomRadEng.v77.i1.70
A. S.
Kravchuk
National Aerospace University (Kharkiv Aviation Institute), 17 Chkalov St.,
Kharkiv 61070, Ukraine
G. A.
Proskura
National Aerospace University (Kharkiv Aviation Institute), 17 Chkalov St.,
Kharkiv 61070, Ukraine
V. V.
Kravchuk
National Aerospace University (Kharkiv Aviation Institute), 17 Chkalov St.,
Kharkiv 61070, Ukraine
optical flow
optical receiver
motion vector
spatial deformations
perspective projection
The mathematical model of optical receiver is considered. The functional dependencies of the motion vectors on the motion parameters and the orientation of the image receiver against the scene are analyzed. The motion vectors with isolated motions are detailed analyzed. Recommendations on the use of the obtained dependences are proposed. The use of the obtained dependencies allows us to solve the problems of estimating the orientation and motion parameters of the camera using high-speed search methods.
PHOTON FLOW DENSITY DISTRIBUTION IN THE DIFFRACTION PATTERN OF SINGLE- AND TWO PARALLEL SLITS
77-82
10.1615/TelecomRadEng.v77.i1.80
A. V.
Bezugly
O.M. Beketov National University of Urban Economy in Kharkiv, 17 Marshal
Bazhanov St., Kharkiv 61002, Ukraine
A. M.
Petchenko
O.M. Beketov National University of Urban Economy in Kharkiv, 17 Marshal
Bazhanov St., Kharkiv 61002, Ukraine
narrow slits
photon flow
diffraction
quantum-mechanical approach
The paper proposes a quantum mechanical model of the phenomenon of light diffraction by one and two slits in an infinitely thin metal screen. Based on the assumption that the photons passing through the slits interact with the electrons of the matter through elastic collisions, the
resulting distribution of light intensity in the diffraction pattern for the cases of diffraction of particles on one and two cracks was obtained.
BASIC COMPONENTS OF TRANSMITTING AND RECEIVING PARTS OF A MICROWAVE ORBITAL POWER CHANNEL
83-94
10.1615/TelecomRadEng.v77.i1.90
A. B.
Gnilenko
Institute of Transport Systems and Technology
National Academy of Sciences of Ukraine
5 Pisarzhevskogo St., Dnipro, 490056, Ukraine
S. V.
Plaksin
Institute of Transport Systems and Technology
National Academy of Sciences of Ukraine
5 Pisarzhevskogo St., Dnipro, 490056, Ukraine
L. M.
Pogorelaya
Institute of Transport Systems and Technology
National Academy of Sciences of Ukraine
5 Pisarzhevskogo St., Dnipro, 490056, Ukraine
transmitting power system
renewable energy sources
photovoltaic cells
Gunn-generator
microwave beam
phased array
rectenna
computer simulation
The paper is aimed to the improvement of the characteristics of the energy transmission channel main components designed for transmission onto the earth's surface of the energy produced by photovoltaic conversion on the orbital platform and then converted into microwave radiation.
The computer simulation on the base of the diffusion-drift model has shown that the choice of silicon, as a semiconductor material, for the lower cascade of a GaInP/GaAs/Si-type solar cell with a larger band-gap than that of germanium in the GaInP/GaAs/Ge type structure and,
therefore, with a higher open-circuit voltage, results in an approximately 20% increase of the total solar cell efficiency. The results of computer simulation of a multi-junction n+–p–p+ structure with vertical p–n junctions at a silicon wafer thickness of 150 μ;m for each n+–p–p+
structure and a carrier lifetime of 20 microseconds show that the efficiency and short circuit current density are equal 11.9% and 25.8 mA/cm2, respectively. The base element of the radiating antenna array, optimized for the frequency corresponding to the second atmosphere transparency window, is modeled using the CST Microwave Studio software package: it is shown that the angular width of the directional diagram of such a radiator at a level of 3 dB is
38.9 degrees, and the efficiency reaches a maximum of 93.2% near the 95 GHz frequency. The applicability of the absolute negative resistance mode in multivalley semiconductors (of the n-GaAs type) for converting microwave radiation into direct current has been analytically investigated and experimentally tested. It is established that such a device is able to convert microwave radiation near the 500 kW power level (in case of installation of semiconductor structure in a reduced-section waveguide – 90 × 22.5 mm2 for a frequency of 2.45 GHz).