Begell House Inc.
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
HTM
1093-3611
18
4
2014
CHARACTERISTIC FEATURES OF THE PHOTOLUMINESCENCE OF ANODIC ALUMINA OXIDE IN THE α-PHASE
243-253
10.1615/HighTempMatProc.2015015619
I. V.
Gasenkova
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus
N. I.
Mukhurov
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus
S. P.
Zhvavy
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus
thermal annealing
alumina
α-phase
photoluminescence
oxygen vacancies
The results of investigation of the optical properties of porous anodic alumina oxide films modified by thermal annealing in air at a temperature of 1300°C are presented. It was found that intensive lines are observed in the red area of photoluminescence spectrum corresponding to the radiative transfer (2E → 4A2) of Mn4+ (678 nm) and Cr3+ (694 nm) ions that at high-temperature reconstruction of alumina oxide structure replace Al3+ ions in octahedral positions. Excitation of the luminescence of Mn4+ ions takes place in a wide strip with a maximum at 308 nm due to the absorption of radiation by oxygen vacancies located in the ion coordination sphere of these ions. It has been shown that photoluminescence in near UV and visible areas of spectrum is determined by oxygen vacancies (F and F2 type) in various charge conditions, the contribution of which is determined by the wavelength of exciting radiation.
ION-BEAM SYNTHESIS OF ZINC-BASED NANOPARTICLES IN Si AND SiO2
255-261
10.1615/HighTempMatProc.2015015570
Maksim
Makhavikou
A. N. Sevchenko Institute of Applied Physical Problems of Belarusian State University
F. F.
Komarov
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus; Institute of Applied Physics Problem, 7 Kurchatov Str., Minsk, 220045, Belarus
L. A.
Vlasukova
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
O. V.
Milchanin
A.N. Sevchenko Research Institute of Applied Physical Problems,
7 Kurchatov Str., Minsk, 220045, Belarus
Irina N.
Parkhomenko
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
nanoclusters
Zn ion implantation
SiO2:Si structure
We have found that the use of "hot" conditions of implantation leads to the formation of the extended layer of SiO2 with a zinc-containing nanoclusters of size up to 5 nm. The created shape of clusters (rounded, faceted) makes it to suppose their crystalline structure. Following annealing at 700°C leads to redistribution of Zn atoms in implanted region and formation of the larger crystallites with sizes of 10−12 nm (for fluence of 5 × 1016 cm−2) and 12−18 nm (for fluence of 1017 cm−2). Significant diffusion of zinc atoms at "hot" conditions of implantation and subsequent annealing to the surface and deep into silicon dioxide samples was not found, in contrast to the samples of single-crystalline silicon.
LIGHT-EMITTING N-RICH SILICON NITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED AND LOW-PRESSURE CVD
263-267
10.1615/HighTempMatProc.2015015576
Irina N.
Parkhomenko
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
F. F.
Komarov
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus; Institute of Applied Physics Problem, 7 Kurchatov Str., Minsk, 220045, Belarus
L. A.
Vlasukova
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
O. V.
Milchanin
A.N. Sevchenko Research Institute of Applied Physical Problems,
7 Kurchatov Str., Minsk, 220045, Belarus
Maksim
Makhavikou
A. N. Sevchenko Institute of Applied Physical Problems of Belarusian State University
A.
Mudryi
Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, Belarus
V.
Zhyvulka
Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, Belarus
J.
Zuk
Maria Curie-Sklodowska University, Lublin, Poland
P.
Kopycinski
Maria Curie-Sklodowska University, Lublin, Poland
L.
Toganbaeva
Al-Farabi Kazakh National University, Almaty, Kazakhstan
N-rich silicon nitride
photoluminescence
plasma-enhanced chemical vapor deposition
low pressure deposition
N-rich silicon nitride films were deposited on Si wafers by plasma-enhanced (PECVD) and low-pressure chemical vapor deposition (LPCVD) techniques and, subsequently, annealed at 600°C. In spite of the same thickness and similar stoichiometric composition, the PECVD and LPCVD silicon nitride films differ in their light-emitting properties. The photoluminescence (PL) maxima lie in the red region and in the blue region for PECVD and LPCVD SiN1.5 films, respectively. The PL is most intensive for films deposited by PECVD. The characteristic features of the photoluminescence spectra of two sets of N-rich films are explained taking into account the contribution from the band tail states and defects in the silicon nitride matrix.
EFFICIENCY OF SILICON LASER ABLATION IN AIR ON BICHROMATIC PULSE IRRADIATION
269-272
10.1615/HighTempMatProc.2015015608
A. N.
Chumakov
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus
Nikolay A.
Bosak
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus
Pavel I.
Verenich
B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus,
68 Nezavisimost Ave., Minsk, 220072, Belarus
bichromatic irradiation
silicon laser ablation
The work is devoted to elucidating the silicon ablation regularities under bichromatic laser radiation at wavelengths of 532 nm and 1064 nm with a controllable order of laser pulses and time delay between them. A manifold increase in the specific mass removal of silicon has been revealed under irradiation with leading 532 nm nanosecond laser pulses followed by 1064-nm pulses with time delay from 3 to 8 µs.
CORONA DISCHARGE IN THE PROCESS OF SPRAYING PROTECTIVE POWDER COATINGS ON PIEZOCERAMIC MATERIALS
273-279
10.1615/HighTempMatProc.2015015694
Marsel
Fazlyyyakhmatov
Kazan National Research Technical University named after A. N. Tupolev – KAI
Nail F.
Kashapov
Kazan Federal University, 18 Kremlevskaya Str., Kazan, 420008, Russia
corona discharge
powder coating
powder spray gun
piezoceramic
spatial thickness distribution
The objects of research are powder coatings and the technology of their application to ultrasonic piezoelectric elements. The results of studies of the distribution of coating thickness for different modes of coating application are presented. The results of simulation of the gas suspension motion in the electrostatic field in the needle−plane electrode system have been confirmed experimentally.
ELECTROEXPLOSIVE DOPING OF TITANIUM ALLOY BY BORON CARBIDE AND SUBSEQUENT ELECTRON BEAM PROCESSING
281-290
10.1615/HighTempMatProc.2015015698
Yurii F.
Ivanov
National Research Tomsk Polytechnic University, 30 Lenin Ave., Tomsk, 634050, Russia; Institute of High Current Electronics, Siberian Branch of the Russian Academy
of Sciences, 2/3 Akademichesky Ave., Tomsk, 634055, Russia
T. A.
Kobzareva
Siberian State Industrial University, 42 Kirov St., Novokuznetsk, 654007, Russia
V. E.
Gromov
Sibirian State Industrial University, 42 Kirov St., Novokuznetsk, 654007, Russia
E. A.
Budovskikh
Sibirian State Industrial University, 42 Kirov St., Novokuznetsk, 654007, Russia
L. P.
Bashchenko
Siberian State Industrial University, 42 Kirov St., Novokuznetsk, 654007, Russia
titanium alloy
doping
electroexplosion
high-current electron beam treatment
structure
phase
boron carbide
VT6 titanium alloy surface modification is carried out by electroexplosive alloying with a plasma formed in explosion of a titanium foil with a weight powder sample of boron carbides with subsequent irradiation by a pulsed electron beam. The formation of an electroexplosive alloying zone of thickness up to 50 µm with a gradient structure, characterized by the decrease in the concentration of carbon and boron with increasing distance to the treatable surface has been revealed. Subsequent electron-beam treatment of the alloying zone leads to smoothing of the alloying area surface and is accompanied by the formation of a multilayer structure at a depth of 30 µm with alternating layers with different degrees of alloying having the structure at the submicro- and nanoscale level.
SIMULATION OF PHASE TRANSITIONS INDUCED IN CdTe BY PULSED LASER RADIATION
291-298
10.1615/HighTempMatProc.2015015699
A. I.
Urbanovich
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
S. P.
Zhvavy
B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost Ave., Minsk, 220072, Belarus
melting
solidification
evaporation
CdTe
Numerical simulation of the processes of melting and solidification under the action of nanosecond ruby laser on CdTe is carried out with account for the diffusion of components in the melt and their evaporation from the surface. It is shown that intense cooling of the surface of the material as a result of the evaporation of cadmium atoms leads to the formation of a nonmonotonic profile of the temperature field with a maximum temperature in the semiconductor at a distance of ~20 nm from the surface. The value of the threshold energy density required for the melt exit on the surface may exceed the energy density required for the formation of the latent melt layer by about 15−20%.
LOW-FREQUENCY INDUCTIVE TRANSFORMER-TYPE DISCHARGE FOR LARGE-SCALE PLASMA PROCESSING
299-309
10.1615/HighTempMatProc.2015015703
Mikhail
Isupov
Kutateladze Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences, 1 Lavrentiev Ave., Novosibirsk, 630090, Russia
Alexander
Fedoseev
Kutateladze Institute of Thermophysics SB RAS, Novosibirsk, 630090, Russia
G. I.
Sukhinin
Kutateladze Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences, 1 Lavrentiev Ave., Novosibirsk, 630090, Russia; Novosibirsk State University, 2 Pirogov Str., Novosibirsk, 630090, Russia
inductively coupled plasma
electrodeless discharge
large scale plasma processing
The electrophysical and thermophysical characteristics of a low-frequency (100 kHz) inductive transformer-type discharge have been investigated at an argon pressure of 10−100 Pa, discharge currents of 1−10 A, and a discharge chamber diameter of 230 mm. A self-consistent radial model of the low-frequency inductive transformer-type discharge based on the assumption of the Maxwellian electron energy distribution function and on the simultaneous solution of the balance equations for the electron and metastable atom densities, electron energy, and gas temperature, has been developed. The dependences of the electric field strength, electron and gas temperatures, electron density on the argon pressure and discharge current are calculated. It is shown that the numerical results are in satisfactory agreement with the results given by the probe and with the electric field strength measurements.
COMBINED MODIFICATION OF ALUMINUM BY ELECTRON-ION-PLASMA METHODS
311-317
10.1615/HighTempMatProc.2015015710
Yurii F.
Ivanov
National Research Tomsk Polytechnic University, 30 Lenin Ave., Tomsk, 634050, Russia; Institute of High Current Electronics, Siberian Branch of the Russian Academy
of Sciences, 2/3 Akademichesky Ave., Tomsk, 634055, Russia
Olga V.
Krysina
Institute of High Current Electronics, Siberian Branch of the Russian Academy
of Sciences, 2/3 Akademichesky Ave., Tomsk, 634055, Russia
M.
Rygina
National Research Tomsk Polytechnic University, 30 Lenin Ave., Tomsk, 634050, Russia
E. A.
Petrikova
Institute of High Current Electronics, Siberian Branch of the Russian Academy
of Sciences, 2/3 Akademichesky Ave., Tomsk, 634055, Russia
A. D.
Teresov
Institute of High-Current Electronics, Siberian Branch of the Russian Academy of Sciences, 2/3 Akademicheskiy Ave., Tomsk, 634055, Russia; National Research Tomsk State University, 36 Lenin Ave., Tomsk, 634050, Russia
V. V.
Shugurov
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences, 2/3 Akademicheskii Ave., Tomsk, 634055, Russia; National Research Tomsk State University, 36 Lenin Ave., Tomsk, 634050, Russia
O. V.
Ivanova
Tomsk State University of Architecture and Building, 2 Solyanaya Square, Tomsk, 634003, Russia
I. A.
Ikonnikova
Tomsk State University of Architecture and Building, 2 Solyanaya Square, Tomsk, 634003, Russia
film-substrate system
electron beam irradiation
deposition
phase state
structure
properties
The paper presents the results of the determination of the elemental composition, phase state, and defect substructure of the Al surface layer after electron beam irradiation. It is shown that the melting of the Ti−12% Cu film−Al substrate system allows the formation of a multiphase submicrocrystalline surface structure with high strength and high tribological properties.
THE EFFECT OF SIZE STABILIZATION OF CARBON STEELS AUSTENITE
319-328
10.1615/HighTempMatProc.2015015756
Yurii F.
Ivanov
National Research Tomsk Polytechnic University, 30 Lenin Ave., Tomsk, 634050, Russia; Institute of High Current Electronics, Siberian Branch of the Russian Academy
of Sciences, 2/3 Akademichesky Ave., Tomsk, 634055, Russia
E. V.
Kozlov
Tomsk State University of Architecture and Building, 2 Solyanaya Squ., Tomsk, 634002, Russia
steel
high-current electron-beam treatment
martensite
austenite
Investigation of the morphology and faulty substructure of the martensite of carbon steels that undergone static (furnace) and dynamic (high-current electron beam) thermal treatment has been conducted using the diffraction electron microscopy methods. It has been shown that a rapid quenching from a liquid state accompanied by the formation of a grain ensemble of submicron size (0.1−0.5 µm) leads, first, to the reduction in the size of the martensite − phase crystals; second, to the fixation of the surface martensite effect, and third, to the formation of one ~0.3-µm martensite crystal (grain − martensite crystal) in grains (subgrains).
INDEX FOR VOLUME 18, 2014
329-333
10.1615/HighTempMatProc.v18.i4.110