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DOI: 10.1615/ICHMT.2013.IntSympRadTransf.270
pages 343-357

Basil T. Wong
Faculty of Engineering, Computing & Science Swinburne University of Technology Sarawak Campus Kuching, Sarawak 93350, Malaysia

Mathieu Francoeur
Dept.of Mechanical Engineering, University of Utah; and Radiative Transfer Laboratory,Dept. of Mechanical Engineering,University of Kentucky, USA; and Département de Génie Mécanique, Université Laval, Québec, G1K 7P4, Canada

Victor N-S Bong
Faculty of Engineering, Computing & Science Swinburne University of Technology Sarawak Campus Kuching, Sarawak 93350, Malaysia

M. Pinar Menguc
Center for Energy, Environment and Economy (CEEE), Department of Mechanical Engineering, Ozyegin University, Cekmekoy, 34794, Istanbul Turkey; and University of Kentucky, Radiative Transfer Laboratory, Lexington, KY 40506, USA


Near-field thermal radiative exchange between two objects is typically more effective than the far-field thermal radiative exchange as the heat flux can increase up to several orders higher in magnitudes due to tunneling of evanescent waves. Such an interesting phenomenon has started to gain its popularity in nanotechnology, especially in nano-gap thermophotovoltaic systems and near-field radiative cooling of micro-/nano-devices. Here, we explored the existence of thermal gradient within an n-doped silicon thin film when it is subjected to intensive near-field thermal radiative heating. The near-field radiative power density deposited within the film is calculated using the Maxwell equations combined with fluctuational electrodynamics. A phonon Monte Carlo simulation is then used to assess the temperature gradient by treating the near-field radiative power density as the heat source. Results indicated that it is improbable to have temperature gradient with the near-field radiative heating as a continuous source unless the source comprises of ultra-short radiative pulses with a strong power density.

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