%0 Journal Article %A Prokhorov, E. D. %A Botsula, O. V. %A Klimenko, O. A. %A Storozhenko, I. P. %D 2013 %I Begell House %K GaAs resonant-tunnel barrier diodes, current-voltage characteristics, generation efficiency, harmonic generation, frequency multiplication %N 17 %P 1589-1600 %R 10.1615/TelecomRadEng.v72.i17.40 %T GENERATION EFFICIENCY OF RESONANT-TUNNEL BARRIER DIODES IN SANDWICH-TYPE STRUCTURES %U https://www.dl.begellhouse.com/journals/0632a9d54950b268,1db2511a272d8814,4175013c0e3304be.html %V 72 %X The current-voltage characteristics and the generation efficiency of diodes with resonant tunnel barriers implemented in the GaAs sandwich-type structures are studied. We consider the models of diodes with single-level and two-level barriers. The frequency limit of the diode with resonant-tunnel barriers was estimated. A possibility of harmonic generation and frequency multiplication of diodes with reasonable-tunneling barriers in the range from tens to hundreds GHz was shown. %8 2013-08-26