RT Journal Article ID 239299047f67c698 A1 Makhniy, Victor P. A1 Melnyk, V. V. A1 Vorobiev, Yu. V. T1 SURFACE-BARRIER UV DETECTORS BASED ON WIDE BANDGAP SEMICONDUCTORS JF Telecommunications and Radio Engineering JO TRE YR 2018 FD 2018-11-23 VO 77 IS 19 SP 1729 OP 1733 K1 ultraviolet (UV) K1 zinc selenide K1 surface-barrier diode K1 high sensitivity AB We report on successful development of surface-barrier diodes based on zinc selenide. The use carrier injection amplification allowed improvement of device sensitivity up to amplification coefficient of 20 A/W at wavelength of 0.25 μm. PB Begell House LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,02c38ffd5562e24b,239299047f67c698.html