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International Journal for Multiscale Computational Engineering

Publication de 6  numéros par an

ISSN Imprimer: 1543-1649

ISSN En ligne: 1940-4352

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 1.4 To calculate the five year Impact Factor, citations are counted in 2017 to the previous five years and divided by the source items published in the previous five years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) 5-Year IF: 1.3 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 2.2 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00034 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.46 SJR: 0.333 SNIP: 0.606 CiteScore™:: 3.1 H-Index: 31

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THREE-DIMENSIONAL TOPOGRAPHY EVOLUTION ALGORITHM FOR ION BEAM ETCHING PROCESS

Volume 12, Numéro 4, 2014, pp. 351-360
DOI: 10.1615/IntJMultCompEng.2014010761
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RÉSUMÉ

Ion etching is one of the most common and essential processes in modern semiconductor industry. In order to get a better understanding of etching mechanism and provide optimization guidance for the manufacturing process, a three-dimensional topography evolution model based on the phase field method is presented to investigate the effects on surface profile formation during ion beam etching process. Integrating with the Monte Carlo transport of ions in matter (TRIM) calculations for different conditions of ion irradiation, the influences of sputtering, redeposition, etching rate, and diffusion processes are all taken into consideration to compose a kinetic model for ion etching process. Various surface morphologies with ripple-like, pillar-like, and pit-like profiles are formed under different numerical parameters, which are corresponded to various processing conditions. While the sputtering effect plays a dominant factor in the formation mechanism, a roughening topography would be developed, such as the conditions of high ion flux or high ion energy. By decreasing ion flux or increasing temperature, the diffusion process becomes a controlling factor, and it causes a smoothening surface profile. Quantitative analyses of surface roughness for numerical calculations are also examined for the comparison with the experimental observations in the literatures. This theoretical model provides a simple and efficient numerical approach to comprehend the mechanism of topography evolution during ion etching.

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