Publication de 4 numéros par an
ISSN Imprimer: 1093-3611
ISSN En ligne: 1940-4360
Indexed in
SIMULATION OF PHASE TRANSITIONS INDUCED IN CdTe BY PULSED LASER RADIATION
RÉSUMÉ
Numerical simulation of the processes of melting and solidification under the action of nanosecond ruby laser on CdTe is carried out with account for the diffusion of components in the melt and their evaporation from the surface. It is shown that intense cooling of the surface of the material as a result of the evaporation of cadmium atoms leads to the formation of a nonmonotonic profile of the temperature field with a maximum temperature in the semiconductor at a distance of ~20 nm from the surface. The value of the threshold energy density required for the melt exit on the surface may exceed the energy density required for the formation of the latent melt layer by about 15−20%.