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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v69.i15.60
pages 1391-1400

HARMONIC GENERATION AND FREQUENCY MULTIPLICATION CAUSED BY THE IMPACT IONIZATION IN GaN-DIODES

O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
D. V. Pavlenko
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine

RÉSUMÉ

The object of the consideration is the impact ionization in GaN diodes. The study revealed rich potentialities of the considered compounds, with the impact ionization in the diodes, for the application in centimeter and millimeter wave ranges, as they can provide up to five-fold over-threshold voltage and the efficiency ranging from 11 to 13%. The achievable harmonic generation efficiency of GaN diodes has been demonstrated. The frequency multiplication by the impact ionization in GaN diodes has been considered. The impact ionization in GaN diodes can substantially increase the frequency conversion coefficient, so that at the second harmonic is reaches 40%.

RÉFÉRENCES

  1. Farahmand, M., Garetto, C., Bellot, E. et al., Monte Carlo Simulation of Electron Transport in the 111-nitride wurtzite phase materials system: binaries and ternaries.

  2. Sze, S., Physics of Semiconductor Devices.

  3. Pavlenko, D.V. and Prokhorov, E.D., The width of the current-voltage characteristics in the In<sub>x</sub>Ga<sub>1-x</sub>N Gunn diodes.

  4. Pavlenko, D.V. and Prokhorov, E.D., Influence of impact ionization on operation efficiency of InN, GaN, AlN LSA diodes.

  5. Pavlenko, D.V. and Prokhorov, E.D., Influence of impact ionization on operation efficiency of InN, GaN, AlN LSA diodes.

  6. Botsula, O.V., Pavlenko, D.V., and Prokhorov, E.D., Harmonic generation by the impact ionization in GaN LSA diodes.

  7. Prokhorov, E.D. and Shalayev, V.A., Study on the regularities of the impact ionization in the semiconductor engineering and microelectronics of the Gunn diodes.


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