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Telecommunications and Radio Engineering

Publication de 12  numéros par an

ISSN Imprimer: 0040-2508

ISSN En ligne: 1943-6009

SJR: 0.185 SNIP: 0.268 CiteScore™:: 1.5 H-Index: 22

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STATIC DOMAIN IN A TRANSFERRED-ELECTRON DEVICE BASED ON GRADED-GAP AlGaAS

Volume 75, Numéro 12, 2016, pp. 1101-1111
DOI: 10.1615/TelecomRadEng.v75.i12.60
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RÉSUMÉ

The usage of the varyband semiconductors in uniformly doped devices with intervalley electron transfer effect can result in the formation of a static electric domain. Keen interest in the static domain is due to the possibility of creating local electric field strength sufficient for zone-zone impact ionization. Diodes with avalanche ionization in the static domain can be used as active elements of noise generators. The paper analyzes the process of the static domain formation and avalanche current in it on the basis of a two-temperature model of varyband AlGaAs. It is shown that for a static domain formation at room temperature, two conditions are required. First, the minimum value of the energy gap between the Γ-valley and the closest to it in side valley by energy should be smaller than the thermal energy of the electrons. Secondly, the rate of change of the energy gap with coordinate must be greater than 150 eV·m-1. Accordingly, in the devices based on Al0.36Ga0.64As–GaAs cathode static domain is formed, and in the devices on the basis of GaAs-Al0.36Ga0.64As anode domain is formed. Varyband semiconductor compounds in which the static domain may form has been determined. The usage of graded-gap Al0.36Ga0.64As–GaAs compound with low doping level near the cathode increases the effective and integral current-multiplication factors as compared to GaAs-diode. The findings expand the knowledge of the physical processes of carrier transport in complex semiconductor structures. They can be used for technological development of new high-speed devices, such as transistors, diodes, Gunn diodes with a static domain, avalanche transit-time diodes, frequency multipliers.

CITÉ PAR
  1. On increasing power of short InGaPAs graded-gap Gunn diodes, Visnyk of V.N. Karazin Kharkiv National University, series “Radio Physics and Electronics”, 31, 2019. Crossref

  2. Storozhenko Ihor, Kaydash Marina, Yaroshenko Oleksandr, Arkusha Yuri, Wide-Band Gunn Diodes Based on Graded-Gap InGaP/ InP As, 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2018. Crossref

  3. Botsula Oleg, Prykhodko Kyrylo, Sub-THz and THz Noise Generation by Diode Heterostructures under Impact Ionization, 2020 IEEE Ukrainian Microwave Week (UkrMW), 2020. Crossref

  4. Botsula O.V., Prykhodko K.H., Graded Band Diode for Noise Generation in Terahertz Range, 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2018. Crossref

  5. Botsula O. V., Prykhodko K. H., Graded Band InGaN- Based Diode for Noise Generation in Terahertz Range, 2020 IEEE Ukrainian Microwave Week (UkrMW), 2020. Crossref

  6. Storozhenko Ihor, Kaydash Maryna, Yaroshenko Oleksandr, The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors, 2018 IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory (MMET), 2018. Crossref

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