Publication de 12 numéros par an
ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009
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POWER CHARACTERISTICS OF MULTIFREQUENCY MILLIMETER AND SUBMILLIMETER WAVE SELF-OSCILLATORS BASED ON THE pn-i-pn STRUCTURES
RÉSUMÉ
Power characteristics are analyzed of mulifrequency millimeter and submillimeter wave self-oscillators on the basis of Si and GaAs dc reverse-biased pn−i−pn structures with abrupt p-n junctions. Mathematically, self-oscillators are described by drift-diffusion model equations for semiconductors. An algorithm is suggested for solving difference equations of the mathematical model. The volt-ampere characteristics of the pn−i−pn structures are analyzed. The dynamics in the distributions of the electric field, electric potential and total charge of mobile carriers and impurity atoms in the pn−i−pn structure is investigated. The Fourier spectrum of the useful power density and the electronic efficiency of the multifrequency self-oscillators are calculated.