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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v60.i34.120
10 pages

Electrostatic Fields in Reverse-Biased pn - i -pn Structures

P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine

RÉSUMÉ

Static electric fields are analyzed in GaAs, Si and Ge reverse—biased pn-i-pn structures. Analytic expressions have been derived for the electric field and electric potential in uniformly doped pn-i-pn structures. Both the geometry and the doping profile have been calculated for the structures. Conditions for a drift current-controlled positive feedback between the p-n junction have been established. It is shown that by properly selecting parameters of the reverse-biased pn-i-pn structures it is possible to provide both the desired electric field distribution over the neutral i-region of the structure and the required magnitude of the multiplication factor fro electron-hole pairs of the p-n junctions.


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