Publication de 12 numéros par an
ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009
Indexed in
Electrostatic Fields in Reverse-Biased pn - i -pn Structures
RÉSUMÉ
Static electric fields are analyzed in GaAs, Si and Ge reversebiased pn-i-pn structures. Analytic expressions have been derived for the electric field and electric potential in uniformly doped pn-i-pn structures. Both the geometry and the doping profile have been calculated for the structures. Conditions for a drift current-controlled positive feedback between the p-n junction have been established. It is shown that by properly selecting parameters of the reverse-biased pn-i-pn structures it is possible to provide both the desired electric field distribution over the neutral i-region of the structure and the required magnitude of the multiplication factor fro electron-hole pairs of the p-n junctions.